N-Channel Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology, Lower Input Capacitance, Improved Gate Charge, Extended Safe Operating Area, Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on)
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